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When a semiconductor device is reverse biased it should not conduct any current, however, due to an increased barrier potential, the free electrons on the p side are dragged to the battery's positive terminal, while holes on the n side are dragged to the battery's negative terminal. This produces a current of minority charge carriers and hence its magnitude is extremely small. For constant temperatures, the reverse current is almost constant although the applied reverse voltage is increased up to a certain limit. Hence, it is also called reverse saturation current.
Reverse leakage current is also known as "zero gate voltage-drain current" with MOSFETs. The leakage current increased with temperature. As an example, the Fairchild Semiconductor FDV303N has a reverse leakage of up to 1 microamp at room temperature rising to 10 microamps with a junction temperature of 50 degrees Celsius. For all basic purposes, leakage currents are very small, and, thus, are normally negligible.
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